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DMTH43M8LPSQ-13

MOSFETN-CH 40VPOWERDI5060-8


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMTH43M8LPSQ-13
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 850
  • Description: MOSFETN-CH 40VPOWERDI5060-8 (Kg)

Details

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Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 2.7W Ta
Power Dissipation 2.7W
Turn On Delay Time 5.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3.367nF @ 20V
Current - Continuous Drain (Id) @ 25°C 22A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 23.5 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Max Junction Temperature (Tj) 175°C
Height 1.15mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Manufacturer Package Identifier PowerDI5060-8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
See Relate Datesheet

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