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DMTH6002LPS-13

MOSFET N-CH 60V 100A POWERDI5060


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMTH6002LPS-13
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 811
  • Description: MOSFET N-CH 60V 100A POWERDI5060 (Kg)

Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 130.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Factory Lead Time 1 Week
Drain Current-Max (Abs) (ID) 100A
Mounting Type Surface Mount
Drain-source On Resistance-Max 0.003Ohm
Pulsed Drain Current-Max (IDM) 200A
Package / Case 8-PowerTDFN
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 294 mJ
Surface Mount YES
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 167W
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6555pF @ 30V
Current - Continuous Drain (Id) @ 25°C 100A Tc
See Relate Datesheet

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