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DMTH6010SK3Q-13

MOSFET NCH 60V 16.3A TO252


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMTH6010SK3Q-13
  • Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Datasheet: PDF
  • Stock: 186
  • Description: MOSFET NCH 60V 16.3A TO252 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2841pF @ 30V
Current - Continuous Drain (Id) @ 25°C 16.3A Ta 70A Tc
Gate Charge (Qg) (Max) @ Vgs 38.1nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 70A
Drain Current-Max (Abs) (ID) 16.3A
Drain-source On Resistance-Max 0.008Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 27.7 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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