Parameters | |
---|---|
Avalanche Energy Rating (Eas) | 147 mJ |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
Series | Automotive, AEC-Q101 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.6W Ta |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 16m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2051pF @ 40V |
Current - Continuous Drain (Id) @ 25°C | 50A Tc |
Gate Charge (Qg) (Max) @ Vgs | 46.8nC @ 10V |
Drain to Source Voltage (Vdss) | 80V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 50A |
Drain-source On Resistance-Max | 0.016Ohm |
Pulsed Drain Current-Max (IDM) | 80A |
DS Breakdown Voltage-Min | 80V |