DN0150BDJ-7
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-963 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | NPN |
| Element Configuration | Dual |
| Power - Max | 300mW |
| Gain Bandwidth Product | 60MHz |
| Transistor Type | 2 NPN (Dual) |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 60MHz |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 450μm |
| Length | 1mm |
| Width | 800μm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
