Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Additional Feature | LOW THRESHOLD |
HTS Code | 8541.90.00.00 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.5W Ta |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 10 Ω @ 300mA, 0V |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 350mA Tj |
Rise Time | 20ns |
Drive Voltage (Max Rds On,Min Rds On) | 0V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 15 ns |
Continuous Drain Current (ID) | 350mA |
JEDEC-95 Code | TO-252AA |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 500V |
Pulsed Drain Current-Max (IDM) | 1A |
FET Feature | Depletion Mode |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |