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DN2530N3-G

Trans MOSFET N-CH 300V 0.175A 3-Pin TO-92 Bag


  • Manufacturer: Microchip Technology
  • Nocochips NO: 536-DN2530N3-G
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 131
  • Description: Trans MOSFET N-CH 300V 0.175A 3-Pin TO-92 Bag (Kg)

Details

Tags

Parameters
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 175mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 300V
FET Feature Depletion Mode
Feedback Cap-Max (Crss) 5 pF
Height 5.33mm
Length 5.21mm
Width 4.19mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 740mW Ta
Element Configuration Single
Power Dissipation 740mW
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12 Ω @ 150mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 175mA Tj
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 0V
See Relate Datesheet

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