DN2540N5-G
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 500mA Tj |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 0V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 500mA |
| Threshold Voltage | -1.5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Factory Lead Time | 1 Week |
| Drain Current-Max (Abs) (ID) | 0.5A |
| Mount | Through Hole |
| Drain to Source Breakdown Voltage | 400V |
| Mounting Type | Through Hole |
| Pulsed Drain Current-Max (IDM) | 0.5A |
| Package / Case | TO-220-3 |
| FET Feature | Depletion Mode |
| Height | 22.86mm |
| Length | 10.67mm |
| Number of Pins | 3 |
| Width | 4.83mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Weight | 6.000006g |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 15W Tc |
| Element Configuration | Single |
| Power Dissipation | 15W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 25 Ω @ 120mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 25V |
See Relate Datesheet
