DN3535N8-G
| Parameters | |
|---|---|
| Length | 4.6mm |
| Width | 2.6mm |
| Factory Lead Time | 1 Week |
| Radiation Hardening | No |
| Contact Plating | Tin |
| Mount | Surface Mount |
| REACH SVHC | No SVHC |
| Mounting Type | Surface Mount |
| RoHS Status | ROHS3 Compliant |
| Package / Case | TO-243AA |
| Lead Free | Lead Free |
| Number of Pins | 3 |
| Weight | 52.786812mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH INPUT IMPEDANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Power Dissipation | 1.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10 Ω @ 150mA, 0V |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 230mA Tj |
| Rise Time | 20ns |
| Drive Voltage (Max Rds On,Min Rds On) | 0V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 230mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 350V |
| Pulsed Drain Current-Max (IDM) | 0.5A |
| FET Feature | Depletion Mode |
| Height | 1.6mm |
See Relate Datesheet
