DNA30E2200FE
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-2, IPak |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Additional Feature | LOW LEAKAGE CURRENT |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 40μA @ 2200V |
| Power Dissipation | 110W |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 30A |
| Case Connection | ISOLATED |
| Max Reverse Leakage Current | 1.5mA |
| Operating Temperature - Junction | -55°C~175°C |
| Max Surge Current | 370A |
| Application | HIGH VOLTAGE |
| Voltage - DC Reverse (Vr) (Max) | 2200V |
| Forward Voltage | 1.5V |
| Max Reverse Voltage (DC) | 2.2kV |
| Average Rectified Current | 30A |
| Number of Phases | 1 |
| Capacitance @ Vr, F | 7pF @ 700V 1MHz |
| Peak Non-Repetitive Surge Current | 400A |
| Non-rep Pk Forward Current-Max | 340A |
| Natural Thermal Resistance | 0.2 °C/W |
| Height | 5.21mm |
| Length | 20.29mm |
| Width | 21.34mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
