Parameters | |
---|---|
Length | 2.2mm |
Width | 1.35mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Number of Pins | 6 |
Weight | 6.010099mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Voltage - Rated DC | 80V |
Max Power Dissipation | 200mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 500mA |
Frequency | 100MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | DRDN005 |
Pin Count | 6 |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Power Dissipation | 200mW |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 100MHz |
Transistor Type | NPN + Diode (Isolated) |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
Current - Collector Cutoff (Max) | 100nA |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | 250mV |
Max Breakdown Voltage | 80V |
Collector Base Voltage (VCBO) | 45V |
Emitter Base Voltage (VEBO) | 5V |
Height | 1mm |