DSC9G0200L
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.21.00.75 |
| Max Power Dissipation | 125mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Base Part Number | DSC9G02 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 650MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 15mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 65 @ 1mA 6V |
| Collector Emitter Breakdown Voltage | 20V |
| Gain | 24dB |
| Max Frequency | 650MHz |
| Transition Frequency | 650MHz |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 3V |
| hFE Min | 65 |
| Highest Frequency Band | VERY HIGH FREQUENCY B |
| Noise Figure (dB Typ @ f) | 3.3dB @ 100MHz |
| Height | 600μm |
| Length | 1.6mm |
| Width | 850μm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
