Parameters | |
---|---|
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | DSS2540M |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 250mW |
Case Connection | COLLECTOR |
Gain Bandwidth Product | 300MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 40V |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | 40V |
Transition Frequency | 300MHz |
Collector Emitter Saturation Voltage | 250mV |
Max Breakdown Voltage | 40V |
Collector Base Voltage (VCBO) | 40V |
Emitter Base Voltage (VEBO) | 6V |
Continuous Collector Current | 500mA |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-UFDFN |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Subcategory | Other Transistors |
Max Power Dissipation | 250mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 300MHz |