Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 3 |
Weight | 7.994566mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Max Power Dissipation | 1.2W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 100MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | DSS60601 |
Pin Count | 4 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1.2W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 100MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 6A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 600mA, 6A |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | 300mV |
Max Breakdown Voltage | 60V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 150 |
Height | 1.6mm |
Length | 6.5mm |
Width | 3.5mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |