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DTC114YET1G

TRANS PREBIAS NPN 200MW SC75


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-DTC114YET1G
  • Package: SC-75, SOT-416
  • Datasheet: PDF
  • Stock: 480
  • Description: TRANS PREBIAS NPN 200MW SC75 (Kg)

Details

Tags

Parameters
Continuous Collector Current 100mA
Max Power Dissipation 200mW
Resistor - Emitter Base (R2) 47 k Ω
Terminal Position DUAL
Height 800μm
Terminal Form GULL WING
Length 1.65mm
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Width 900μm
Radiation Hardening No
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DTC114
REACH SVHC No SVHC
Pin Count 3
RoHS Status ROHS3 Compliant
Number of Elements 1
Lead Free Lead Free
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Collector Emitter Breakdown Voltage 50V
Number of Pins 3
Packaging Tape & Reel (TR)
Collector Emitter Saturation Voltage 250mV
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Max Breakdown Voltage 50V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Emitter Base Voltage (VEBO) 6V
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.21
hFE Min 80
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Resistor - Base (R1) 10 k Ω
See Relate Datesheet

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