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DXTN07100BP5-13

DXTN07100BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DXTN07100BP5-13
  • Package: PowerDI™ 5
  • Datasheet: PDF
  • Stock: 846
  • Description: DXTN07100BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerDI™ 5
Number of Pins 3
Weight 95.991485mg
Transistor Element Material SILICON
Manufacturer Package Identifier POWERDI-5
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 3.2W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3.2W
Power - Max 740mW
Transistor Application SWITCHING
Gain Bandwidth Product 175MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
JEDEC-95 Code TO-252
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 175MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V
hFE Min 100
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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