Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | PowerDI™ 5 |
Number of Pins | 3 |
Weight | 95.991485mg |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | POWERDI-5 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Max Power Dissipation | 3.2W |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 175MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 3.2W |
Power - Max | 740mW |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 175MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
JEDEC-95 Code | TO-252 |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 100V |
Transition Frequency | 175MHz |
Collector Emitter Saturation Voltage | 500mV |
Max Breakdown Voltage | 100V |
Collector Base Voltage (VCBO) | 120V |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 100 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |