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DZT5551-13

DZT5551-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DZT5551-13
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 469
  • Description: DZT5551-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DZT5551
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 200V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 115mV
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Max Junction Temperature (Tj) 150°C
Height 1.8mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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