DZT591C-13
| Parameters | |
|---|---|
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | -600mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 15 |
| Continuous Collector Current | -1A |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DZT591 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
See Relate Datesheet
