Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Max Power Dissipation | 1.5W |
Base Part Number | ECH8654 |
Pin Count | 8 |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.5W |
Turn On Delay Time | 14 ns |
FET Type | 2 P-Channel (Dual) |
Rds On (Max) @ Id, Vgs | 38m Ω @ 3A, 4.5V |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Rise Time | 55ns |
Drain to Source Voltage (Vdss) | 20V |
Fall Time (Typ) | 68 ns |
Turn-Off Delay Time | 92 ns |
Continuous Drain Current (ID) | 5A |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 5A |
Pulsed Drain Current-Max (IDM) | 40A |
DS Breakdown Voltage-Min | 20V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Height | 900μm |
Length | 2.9mm |
Width | 2.3mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |