EGP30D
| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| HTS Code | 8541.10.00.80 |
| Capacitance | 95pF |
| Subcategory | Rectifier Diodes |
| Voltage - Rated DC | 200V |
| Terminal Form | WIRE |
| Current Rating | 3A |
| Base Part Number | EGP30D |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5μA @ 200V |
| Power Dissipation | 6.25W |
| Output Current | 3A |
| Voltage - Forward (Vf) (Max) @ If | 950mV @ 3A |
| Case Connection | ISOLATED |
| Forward Current | 3A |
| Operating Temperature - Junction | -65°C~150°C |
| Max Surge Current | 125A |
| Application | EFFICIENCY |
| Forward Voltage | 950mV |
| Max Reverse Voltage (DC) | 200V |
| Average Rectified Current | 3A |
| Number of Phases | 1 |
| Reverse Recovery Time | 50 ns |
| Peak Reverse Current | 5μA |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Capacitance @ Vr, F | 95pF @ 4V 1MHz |
| Peak Non-Repetitive Surge Current | 125A |
| Reverse Voltage | 200V |
| Max Forward Surge Current (Ifsm) | 125A |
| Recovery Time | 50 ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Number of Pins | 2 |
| Weight | 360mg |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
See Relate Datesheet
