EMB11FHAT2R
| Parameters | |
|---|---|
| Polarity/Channel Type | PNP |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
| Current - Collector (Ic) (Max) | 100mA |
| Transition Frequency | 250MHz |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10k Ω |
| Resistor - Emitter Base (R2) | 10k Ω |
| Collector-Emitter Voltage-Max | 50V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2016 |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1.0 |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Power - Max | 150mW |
| Transistor Application | SWITCHING |
See Relate Datesheet
