EMB11T2R
| Parameters | |
|---|---|
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA 5V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Frequency - Transition | 250MHz |
| hFE Min | 20 |
| Resistor - Base (R1) | 10k Ω |
| Continuous Collector Current | -100mA |
| Resistor - Emitter Base (R2) | 10k Ω |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| HTS Code | 8541.21.00.75 |
| Subcategory | BIP General Purpose Small Signal |
| Voltage - Rated DC | -50V |
| Max Power Dissipation | 150mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -50mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | MB11 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | PNP |
| Element Configuration | Dual |
| Power Dissipation | 150mW |
| Transistor Application | SWITCHING |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) | 300mV |
See Relate Datesheet
