Parameters | |
---|---|
Transistor Application | SWITCHING |
Polarity/Channel Type | PNP |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA 5V |
Current - Collector Cutoff (Max) | 500nA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 100mA |
Transition Frequency | 250MHz |
Frequency - Transition | 250MHz |
Power Dissipation-Max (Abs) | 0.15W |
Resistor - Base (R1) | 47k Ω |
Resistor - Emitter Base (R2) | 47k Ω |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Series | Automotive, AEC-Q101 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1.0 |
Subcategory | BIP General Purpose Small Signals |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-F6 |
Number of Elements | 2 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Power - Max | 150mW |