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EMD4T2R

TRANS NPN/PNP PREBIAS 0.15W EMT6


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-EMD4T2R
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 349
  • Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 150mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MD4
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA / 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 68
Resistor - Base (R1) 47k Ω, 10k Ω
Resistor - Emitter Base (R2) 47k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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