EMD5DXV6T1G
| Parameters | |
|---|---|
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power Dissipation-Max (Abs) | 0.5W |
| Resistor - Base (R1) | 4.7k Ω, 47k Ω |
| Resistor - Emitter Base (R2) | 10k Ω, 47k Ω |
| RoHS Status | RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Terminal Finish | Tin (Sn) |
| Subcategory | BIP General Purpose Small Signal |
| Reach Compliance Code | compliant |
| Number of Elements | 2 |
| Power - Max | 500mW |
| Polarity/Channel Type | NPN/PNP |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V / 20 @ 5mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
See Relate Datesheet
