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EMF18XV6T5G

TRANS NPN PREBIAS/PNP SOT563


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-EMF18XV6T5G
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 364
  • Description: TRANS NPN PREBIAS/PNP SOT563 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 17 hours ago)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number EMF
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 357mW
Halogen Free Halogen Free
Transistor Type 1 NPN Pre-Biased, 1 PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V / 120 @ 1mA 6V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA / 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 50V 60V
Transition Frequency 140MHz
Frequency - Transition 140MHz
hFE Min 80
Resistor - Base (R1) 47k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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