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EMF21T2R

TRANS NPN PREBIAS/PNP 0.15W EMT6


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-EMF21T2R
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 443
  • Description: TRANS NPN PREBIAS/PNP 0.15W EMT6 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 1
HTS Code 8541.21.00.75
Subcategory Other Transistors
Max Power Dissipation 150mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MF21
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 1 NPN Pre-Biased, 1 PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V / 270 @ 10mA 2V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage 12V
Voltage - Collector Emitter Breakdown (Max) 50V 12V
Current - Collector (Ic) (Max) 100mA 500mA
Transition Frequency 250MHz
Max Breakdown Voltage 12V
Frequency - Transition 250MHz 260MHz
hFE Min 30
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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