EMF5XV6T5G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO 1 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 500mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | EMF |
| Pin Count | 6 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 2 |
| Polarity | NPN, PNP |
| Element Configuration | Dual |
| Power Dissipation | 500mW |
| Halogen Free | Halogen Free |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V / 270 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA / 250mV @ 10mA, 200mA |
| Collector Emitter Breakdown Voltage | 12V |
| Voltage - Collector Emitter Breakdown (Max) | 50V 12V |
| Current - Collector (Ic) (Max) | 100mA 500mA |
| Collector Emitter Saturation Voltage | 250mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 80 |
| Resistor - Base (R1) | 47k Ω |
| Resistor - Emitter Base (R2) | 47k Ω |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
