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EMH4T2R

TRANS 2NPN PREBIAS 0.15W EMT6


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-EMH4T2R
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 608
  • Description: TRANS 2NPN PREBIAS 0.15W EMT6 (Kg)

Details

Tags

Parameters
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish TIN COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signals
Voltage - Rated DC 50V
Max Power Dissipation 150mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MH4
Pin Count 5
JESD-30 Code R-PDSO-F5
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 150mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
See Relate Datesheet

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