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EMH60T2R

TRANS 2NPN PREBIAS 0.15W EMT6


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-EMH60T2R
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 829
  • Description: TRANS 2NPN PREBIAS 0.15W EMT6 (Kg)

Details

Tags

Parameters
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Max Power Dissipation 150mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 150mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 150mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
See Relate Datesheet

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