EMP11T2R
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Tolerance | 10% |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated | 50V |
| Additional Feature | HIGH RELIABILITY |
| HTS Code | 8541.10.00.70 |
| Capacitance | 1.3pF |
| Subcategory | Other Diodes |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Current Rating | 100mA |
| Base Part Number | MP11 |
| Case Code (Metric) | 1005 |
| Case Code (Imperial) | 0402 |
| Number of Elements | 4 |
| Element Configuration | Common Anode |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 70V |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA |
| Forward Current | 100mA |
| Max Reverse Leakage Current | 100nA |
| Operating Temperature - Junction | 150°C Max |
| Max Surge Current | 4A |
| Output Current-Max | 0.1A |
| Max Reverse Voltage (DC) | 80V |
| Average Rectified Current | 100mA |
| Reverse Recovery Time | 4 ns |
| Max Repetitive Reverse Voltage (Vrrm) | 80V |
| Peak Non-Repetitive Surge Current | 4A |
| Diode Configuration | 2 Pair Common Anode |
| Recovery Time | 4 ns |
| Reverse Test Voltage | 70V |
| Length | 990.6μm |
| Width | 508μm |
| Thickness | 558.8μm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
