EMT1T2R
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3/e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN/TIN COPPER |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -50V |
| Max Power Dissipation | 150mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -150mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | *MT1 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | PNP |
| Element Configuration | Dual |
| Power Dissipation | 150mW |
| Gain Bandwidth Product | 140MHz |
| Transistor Type | 2 PNP (Dual) |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 140MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | -60V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 120 |
| Continuous Collector Current | -150mA |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
