EMZ51T2R
| Parameters | |
|---|---|
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS |
| Power - Max | 150mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN AND PNP |
| Transistor Type | NPN, PNP |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 400MHz |
| Max Breakdown Voltage | 20V |
| Frequency - Transition | 400MHz 350MHz |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2016 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F6 |
See Relate Datesheet
