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F1235R12KT4GBOSA1

IGBT MOD 1200V 35A 210W


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-F1235R12KT4GBOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 910
  • Description: IGBT MOD 1200V 35A 210W (Kg)

Details

Tags

Parameters
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 38
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reach Compliance Code compliant
JESD-30 Code R-XUFM-X38
Number of Elements 12
Configuration Single
Case Connection ISOLATED
Power - Max 210W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Turn On Time 210 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 35A
Turn Off Time-Nom (toff) 620 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 2nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

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