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F3L100R12W2H3B11BPSA1

IGBT MODULE VCES 600V 200A


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-F3L100R12W2H3B11BPSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 784
  • Description: IGBT MODULE VCES 600V 200A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 32
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X32
Number of Elements 4
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 375W
Transistor Application GENERAL PURPOSE
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 100A
Turn On Time 175 ns
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 50A
Turn Off Time-Nom (toff) 465 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 6.15nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

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