F3L400R07ME4B23BOSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C |
| Published | 2002 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 11 |
| ECCN Code | EAR99 |
| Additional Feature | UL APPROVED |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-XUFM-X11 |
| Number of Elements | 2 |
| Configuration | 2 Independent |
| Case Connection | ISOLATED |
| Power - Max | 1150W |
| Transistor Application | POWER CONTROL |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Current - Collector Cutoff (Max) | 1mA |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 450A |
| Power Dissipation-Max (Abs) | 1150W |
| Turn On Time | 260 ns |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 400A |
| Turn Off Time-Nom (toff) | 758 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 26nF @ 25V |
| VCEsat-Max | 1.95 V |
| RoHS Status | RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
