FCA16N60N
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 6.401g |
| Packaging | Tube |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 199mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 134.4W |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 134.4W |
| Turn On Delay Time | 15.8 ns |
| Transistor Application | SWITCHING |
| Rise Time | 15.5ns |
| Drain to Source Voltage (Vdss) | 600V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 20.2 ns |
| Turn-Off Delay Time | 60.3 ns |
| Continuous Drain Current (ID) | 16A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 48A |
| Input Capacitance | 2.17nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 170mOhm |
| Rds On Max | 199 mΩ |
| Nominal Vgs | 4 V |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
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