banner_page

FCB20N60F-F085

MOSFET N CH 600V 20A TO-263AB


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FCB20N60F-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 353
  • Description: MOSFET N CH 600V 20A TO-263AB (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Series Automotive, AEC-Q101, SuperFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number FCB20N60
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 405W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 405W
Case Connection DRAIN
Turn On Delay Time 43 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 195m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2035pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 211 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good