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FCD5N60TM-WS

MOSFET N-CH 600V 4.6A DPAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FCD5N60TM-WS
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 825
  • Description: MOSFET N-CH 600V 4.6A DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number FCD5N60
Number of Elements 1
Power Dissipation-Max 54W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 54W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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