Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | FCD900N60 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 52W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Case Connection | DRAIN |
Turn On Delay Time | 10.9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 900m Ω @ 2.3A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Rise Time | 5.2ns |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 11.9 ns |
Turn-Off Delay Time | 33.6 ns |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Continuous Drain Current (ID) | 4.5A |
Mount | Surface Mount |
Mounting Type | Surface Mount |
JEDEC-95 Code | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Gate to Source Voltage (Vgs) | 20V |
Weight | 260.37mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Drain-source On Resistance-Max | 0.9Ohm |
Series | SuperFET® II |
JESD-609 Code | e3 |
Drain to Source Breakdown Voltage | 650V |
Avalanche Energy Rating (Eas) | 47.5 mJ |
Pbfree Code | yes |
Height | 6.22mm |
Length | 6.73mm |
Part Status | Active |
Width | 2.39mm |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |