FCH041N65F-F155
| Parameters | |
|---|---|
| Element Configuration | Single |
| Avalanche Energy Rating (Eas) | 2025 mJ |
| RoHS Status | ROHS3 Compliant |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 60 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 41m Ω @ 38A, 10V |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Vgs(th) (Max) @ Id | 5V @ 7.6mA |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 13020pF @ 100V |
| Package / Case | TO-247-3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Current - Continuous Drain (Id) @ 25°C | 76A Tc |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Gate Charge (Qg) (Max) @ Vgs | 294nC @ 10V |
| Series | FRFET®, SuperFET® II |
| Rise Time | 47ns |
| JESD-609 Code | e3 |
| Drain to Source Voltage (Vdss) | 650V |
| Pbfree Code | yes |
| Part Status | Active |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Vgs (Max) | ±20V |
| Resistance | 44mOhm |
| Terminal Finish | Tin (Sn) |
| Fall Time (Typ) | 6.5 ns |
| Subcategory | FET General Purpose Power |
| Turn-Off Delay Time | 190 ns |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Continuous Drain Current (ID) | 76A |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JEDEC-95 Code | TO-247AB |
| JESD-30 Code | R-PSFM-T3 |
| Gate to Source Voltage (Vgs) | 30V |
| Number of Elements | 1 |
| Pulsed Drain Current-Max (IDM) | 228A |
| Number of Channels | 1 |
| Power Dissipation-Max | 595W Tc |
| DS Breakdown Voltage-Min | 650V |
See Relate Datesheet
