Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.39g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Series | FRFET®, SuperFET® II |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 481W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 481W |
Turn On Delay Time | 43 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 72m Ω @ 26A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 8660pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 52A Tc |
Gate Charge (Qg) (Max) @ Vgs | 215nC @ 10V |
Rise Time | 38ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 140 ns |
Continuous Drain Current (ID) | 52A |
JEDEC-95 Code | TO-247AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.072Ohm |
Drain to Source Breakdown Voltage | 600V |
Pulsed Drain Current-Max (IDM) | 156A |
Avalanche Energy Rating (Eas) | 1128 mJ |
Height | 20.82mm |
Length | 15.87mm |
Width | 4.82mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |