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FCH130N60

MOSFET SuperFET2 600V, 130mohm


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FCH130N60
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 287
  • Description: MOSFET SuperFET2 600V, 130mohm (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Series SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 278W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3590pF @ 380V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 28A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 84A
Avalanche Energy Rating (Eas) 720 mJ
Height 20.82mm
Length 15.87mm
Width 4.82mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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