Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 23 hours ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.39g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Series | SupreMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Base Part Number | FCH47N60 |
Number of Elements | 1 |
Power Dissipation-Max | 368W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 368W |
Turn On Delay Time | 34 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 65m Ω @ 23.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 6120pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 45.8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 157nC @ 10V |
Rise Time | 22ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 4 ns |
Turn-Off Delay Time | 117 ns |
Continuous Drain Current (ID) | 45.8A |
Threshold Voltage | 3V |
JEDEC-95 Code | TO-247AB |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.065Ohm |
Drain to Source Breakdown Voltage | 600V |
Avalanche Energy Rating (Eas) | 2926 mJ |
Height | 20.82mm |
Length | 15.87mm |
Width | 4.82mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |