Parameters | |
---|---|
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Series | SupreMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 543W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 543W |
Turn On Delay Time | 34 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 36m Ω @ 38A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 12385pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 76A Tc |
Gate Charge (Qg) (Max) @ Vgs | 285nC @ 10V |
Rise Time | 24ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 32 ns |
Turn-Off Delay Time | 235 ns |
Continuous Drain Current (ID) | 76A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 600V |
Pulsed Drain Current-Max (IDM) | 228A |
Avalanche Energy Rating (Eas) | 8022 mJ |
Height | 21mm |
Length | 15.95mm |
Width | 5.03mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.39g |
Transistor Element Material | SILICON |