Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2014 |
Series | SuperFET® II |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 357W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 26 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 104m Ω @ 18.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4165pF @ 380V |
Current - Continuous Drain (Id) @ 25°C | 37A Tc |
Gate Charge (Qg) (Max) @ Vgs | 82nC @ 10V |
Rise Time | 18ns |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3.3 ns |
Turn-Off Delay Time | 72 ns |
Continuous Drain Current (ID) | 37A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
DS Breakdown Voltage-Min | 600V |
Avalanche Energy Rating (Eas) | 809 mJ |
Height | 16.3mm |
Length | 10.67mm |
Width | 4.7mm |
RoHS Status | ROHS3 Compliant |