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FCP130N60

FCP130N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FCP130N60
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 536
  • Description: FCP130N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET® II
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 130mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 278W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3590pF @ 380V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 28A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 84A
Avalanche Energy Rating (Eas) 720 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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