FCP190N65S3
| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 144W Tc |
| Element Configuration | Single |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 190m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.7mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 17A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Weight | 1.8g |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2017 |
| Series | SuperFET® III |
See Relate Datesheet
