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FCP650N80Z

FAIRCHILD SEMICONDUCTOR FCP650N80Z Power MOSFET, N Channel, 10 A, 800 V, 0.53 ohm, 10 V, 4.5 VNew


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FCP650N80Z
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 790
  • Description: FAIRCHILD SEMICONDUCTOR FCP650N80Z Power MOSFET, N Channel, 10 A, 800 V, 0.53 ohm, 10 V, 4.5 VNew (Kg)

Details

Tags

Parameters
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 162W Tc
Element Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 800μA
Input Capacitance (Ciss) (Max) @ Vds 1565pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 10A
Threshold Voltage 4.5V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET® II
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
See Relate Datesheet

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