Parameters | |
---|---|
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 64 ns |
Continuous Drain Current (ID) | 20.2A |
Threshold Voltage | 2.5V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 650V |
Pulsed Drain Current-Max (IDM) | 60.6A |
Avalanche Energy Rating (Eas) | 400 mJ |
Height | 16.07mm |
Length | 10.36mm |
Factory Lead Time | 1 Week |
Width | 4.9mm |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Radiation Hardening | No |
Contact Plating | Tin |
Mount | Through Hole |
REACH SVHC | No SVHC |
Mounting Type | Through Hole |
RoHS Status | ROHS3 Compliant |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Lead Free | Lead Free |
Weight | 2.27g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Series | SuperFET® II |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 39W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 39W |
Case Connection | ISOLATED |
Turn On Delay Time | 20 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 199m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20.2A Tc |
Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
Rise Time | 10ns |